Circuit Design Engineer Interview Questions

232 circuit design engineer interview questions shared by candidates

Difference between 6T and 8T sram cell transistor operating regions in general, and then specifically for inverter reverse body biasing in detail - what happens at transistor and device level. explain projects and stuff
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SRAM Circuit Design Engineer

Interviewed at Qualcomm

3.8
Oct 9, 2011

Difference between 6T and 8T sram cell transistor operating regions in general, and then specifically for inverter reverse body biasing in detail - what happens at transistor and device level. explain projects and stuff

1) compare 2 NFET devices with same W/L. One device has bulk connected to GND and the other has bulk connected to -1v. Drain is fixed at 1v. What device is faster? Why? Explain the body effect and why it affects the device threshold.
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Mixed Signal Circuit Designer

Interviewed at Micron Technology

3.9
Jul 16, 2020

1) compare 2 NFET devices with same W/L. One device has bulk connected to GND and the other has bulk connected to -1v. Drain is fixed at 1v. What device is faster? Why? Explain the body effect and why it affects the device threshold.

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